DOMINANCE OF INTERFACE EFFECTS IN SRO-SIO2-SRO DEIS STRUCTURES FOR EAROMS

被引：8

作者：

CHANG, KT

ROSE, K

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12181

[2] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 10期

关键词：

D O I：

10.1109/16.7367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1645 / 1650

页数：6

共 16 条

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[6] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J].

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[7] DUAL-ELECTRON-INJECTOR-STRUCTURE ELECTRICALLY ALTERABLE READ-ONLY-MEMORY MODELING STUDIES [J].

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DONG, DW .

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[8]

DIMARIA DJ, 1980, PHYSICS MOS INSULATO, P1

[9] PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS [J].

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[10]

DRORI J, 1981, IEEE INT SOLID STATE, V24, P148

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