THE ASYMPTOTES OF THE BASE CURRENT IN BIPOLAR-DEVICES

被引:14
作者
CASTANER, LM
ASHBURN, P
VINAS, LP
WOLSTENHOLME, GR
机构
[1] UNIV SOUTHAMPTON,DEPT ELECTR & COMP SCI,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND
[2] ESCUELA TECN SUPER INGN TELECOMMUN,BARCELONA,SPAIN
关键词
D O I
10.1109/16.7403
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1902 / 1908
页数:7
相关论文
共 27 条
[11]   AN ANALYTIC MODEL FOR MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED REGIONS OF SILICON DEVICES [J].
FOSSUM, JG ;
SHIBIB, MA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1018-1025
[12]   CARRIER RECOMBINATION AND LIFETIME IN HIGHLY DOPED SILICON [J].
FOSSUM, JG ;
MERTENS, RP ;
LEE, DS ;
NIJS, JF .
SOLID-STATE ELECTRONICS, 1983, 26 (06) :569-576
[13]  
Ghandhi S.K, 1995, VLSI FABRICATION PRI
[14]   25-PERCENT EFFICIENT LOW-RESISTIVITY SILICON CONCENTRATOR SOLAR-CELLS [J].
GREEN, MA ;
JIANHUA, Z ;
BLAKERS, AW ;
TAOUK, M ;
NARAYANAN, S .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :583-585
[15]  
Kwark Y. H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P742
[16]   TOWARD A SYSTEMATIC DESIGN THEORY FOR SILICON SOLAR-CELLS USING OPTIMIZATION TECHNIQUES [J].
MISIAKOS, K ;
LINDHOLM, FA .
SOLAR CELLS, 1986, 17 (01) :29-52
[17]   EXPERIMENTAL-STUDY OF THE MINORITY-CARRIER TRANSPORT AT THE POLYSILICON MONOSILICON INTERFACE [J].
NEUGROSCHEL, A ;
ARIENZO, M ;
KOMEM, Y ;
ISAAC, RD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) :807-816
[18]   A METHOD FOR DETERMINING ENERGY-GAP NARROWING IN HIGHLY DOPED SEMICONDUCTORS [J].
NEUGROSCHEL, A ;
PAO, SC ;
LINDHOLM, FA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (05) :894-902
[19]   MINORITY-CARRIER DIFFUSION-COEFFICIENTS AND MOBILITIES IN SILICON [J].
NEUGROSCHEL, A .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) :425-427
[20]   EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES [J].
NING, TH ;
ISAAC, RD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2051-2055