MINORITY-CARRIER DIFFUSION-COEFFICIENTS AND MOBILITIES IN SILICON

被引：32

作者：

NEUGROSCHEL, A

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 08期

关键词：

D O I：

10.1109/EDL.1985.26178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：425 / 427

页数：3

共 21 条

[1] HOLE AND ELECTRON MOBILITIES IN HEAVILY DOPED SILICON - COMPARISON OF THEORY AND EXPERIMENT [J].

BENNETT, HS .

SOLID-STATE ELECTRONICS, 1983, 26 (12) :1157-1166

[2]

BIRRITTELLA MS, 1979, IEEE T ELECTRON DEVI, V26, P1371

[3]

BURK DE, 1984, IEEE ELECTRON DEVICE, V5, P321

[4] DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1. [J].

DANNHAUSER, F .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1371-+

[5] MEASUREMENT OF ELECTRON-MOBILITY IN EPITAXIAL HEAVILY-PHOSPHORUS-DOPED SILICON [J].

DELALAMO, JA ;

SWANSON, RM .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2250-2252

[6] THE EFFECT OF ELECTRON-HOLE SCATTERING ON MINORITY-CARRIER TRANSPORT IN BIPOLAR-TRANSISTORS [J].

DUMKE, WP .

SOLID-STATE ELECTRONICS, 1985, 28 (1-2) :183-186

[7] MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON [J].

DZIEWIOR, J ;

SILBER, D .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :170-172

[8] MEASUREMENT OF DIFFUSION LENGTH, LIFETIME, AND SURFACE RECOMBINATION VELOCITY IN THIN SEMICONDUCTOR LAYERS [J].

GONZALEZ, FN ;

NEUGROSCHEL, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) :413-416

[9]

JUNG TW, 1984, IEEE T ELECTRON DEV, V31, P588, DOI 10.1109/T-ED.1984.21573

[10] BAND TAILS IN SEMICONDUCTORS [J].

KANE, EO .

SOLID-STATE ELECTRONICS, 1985, 28 (1-2) :3-10

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