EFFECT OF SUBSTRATE ROUGHNESS ON POROUS SILICON LIGHT-EMISSION

被引：8

作者：

DIFRANCIA, G ^{[1
]}

MENNA, P ^{[1
]}

FALCONIERI, M ^{[1
]}

机构：

[1] ENEA,CTR RIC ENERGIA CASACCIA,I-00060 ROME,ITALY

来源：

JOURNAL OF LUMINESCENCE | 1993年 / 57卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(93)90113-2

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Porous silicon layers fabricated on substrates of different roughness are studied. The photoluminescence characteristics of these samples are reported at room and liquid nitrogen temperature. The initial roughness of the substrates regulates the porous silicon formation mechanism. The results are explained in terms of the quantum confinement model. The rougher the starting substrate, the narrower is the size distribution of the emitting structures.

引用

页码：95 / 99

页数：5

共 11 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].