HIGH-VOLTAGE JUNCTION-GATE FIELD-EFFECT TRANSISTOR WITH RECESSED GATES

被引：13

作者：

BALIGA, BJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 10期

关键词：

D O I：

10.1109/T-ED.1982.20915

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1560 / 1570

页数：11

共 21 条

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[8] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J].

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