INTERSTITIAL INTERACTIONS - ARSENIC-ALUMINUM, PHOSPHORUS-ALUMINUM PUSH EFFECT

被引:10
作者
ARONOWITZ, S [1 ]
RIGA, G [1 ]
机构
[1] RIGA ANALYT LAB INC,SANTA CLARA,CA 95054
关键词
ALUMINUM AND ALLOYS - Arsenic - Boron - Phosphorus - PHYSICAL CHEMISTRY - Calculations;
D O I
10.1149/1.2100535
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Quantum chemical calculations on a model silicon lattice where the interstitial n-type dopants, arsenic and phosphorus, interact with the interstitial p-type dopants, aluminum and boron, yield net system energies in a sequence outlined by the authors. This sequence indicates that the interstitial boron-phosporus pair will repulse each other while the boron-arsenic pair will not. This is consistent with the emitter push effect. However, when aluminum replaces boron the predicted behavior is that a push efect should be observed when either interstitial arsenic or phosphorus is present. The effect should be more pronounced in the aluminum-arsenic case.
引用
收藏
页码:702 / 707
页数:6
相关论文
共 10 条
[1]   QUANTUM-CHEMICAL MODELING OF BORON AND NOBLE-GAS DOPANTS IN SILICON [J].
ARONOWITZ, S .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3930-3934
[2]   QUANTUM-CHEMICAL MODELING OF SMECTITE CLAYS [J].
ARONOWITZ, S ;
COYNE, L ;
LAWLESS, J ;
RISHPON, J .
INORGANIC CHEMISTRY, 1982, 21 (10) :3589-3593
[3]   OPEN-TUBE DIFFUSION [J].
CHANG, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :1987-1992
[4]   QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].
FAIR, RB ;
TSAI, JCC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1107-1118
[5]   SILICON SELF-INTERSTITIAL SUPERSATURATION DURING PHOSPHORUS DIFFUSION [J].
HARRIS, RM ;
ANTONIADIS, DA .
APPLIED PHYSICS LETTERS, 1983, 43 (10) :937-939
[6]   DYNAMICS OF CHARGE-DENSITY WAVE .2. LONG-RANGE COULOMB EFFECTS IN AN ARRAY OF CHAINS [J].
LEE, PA ;
FUKUYAMA, H .
PHYSICAL REVIEW B, 1978, 17 (02) :542-548
[7]   ENHANCED TAIL DIFFUSION OF PHOSPHORUS AND BORON IN SILICON - SELF-INTERSTITIAL PHENOMENA [J].
MOREHEAD, FF ;
LEVER, RF .
APPLIED PHYSICS LETTERS, 1986, 48 (02) :151-153
[8]   STUDIES OF ANOMALOUS DIFFUSION OF IMPURITIES IN SILICON [J].
NICHOLAS, KH .
SOLID-STATE ELECTRONICS, 1966, 9 (01) :35-+
[9]  
SATO Y, 1964, JPN J APPL PHYS, V3, P511
[10]   ARSENIC-IMPLANTED EMITTER AND ITS APPLICATION TO UHF POWER TRANSISTORS [J].
TSUKAMOTO, K ;
AKASAKA, Y ;
WATARI, Y ;
KUSANO, Y ;
HIROSE, Y ;
NAKAMURA, G .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :187-192