AGGREGATION EQUILIBRIA IN ARSENIC DOPED SILICON

被引:2
作者
DERDOUR, M
FURLAN, G
NOBILI, D
机构
[1] INT CTR THEORET PHYS,I-34100 TRIESTE,ITALY
[2] CNR,IST LAMEL,I-40126 BOLOGNA,ITALY
[3] UNIV TRIESTE,DEPT THEORET PHYS,I-34127 TRIESTE,ITALY
关键词
D O I
10.1016/0927-0248(94)90107-4
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Carrier density profile determinations are reported which confirm that a mass action relation holds between the ionized and the inactive mobile As in silicon. Experiments were performed under equilibrium conditions at temperatures in the range 780-885-degrees-C. The carrier density n versus the dopant concentration N(T) exhibits a very pronounced saturation behaviour which is compared with the one expected in well known cluster models. These results complement the recent finding that the inactive As can exist in equilibrium with the monoclinic SiAs. From this information and previous SAXS, TEM, and EXAFS results one can conclude that a pre-precipitation phenomenon, with its inherent cluster distribution, is responsible for the inactive As.
引用
收藏
页码:435 / 441
页数:7
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