PRECISE ION-IMPLANTATION ANALYSIS INCLUDING CHANNELING EFFECTS

被引：10

作者：

TAKEDA, T ^{[1
]}

TAZAWA, S ^{[1
]}

YOSHII, A ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 09期

关键词：

D O I：

10.1109/T-ED.1986.22658

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1278 / 1285

页数：8

共 14 条

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[3] CALCULATION OF CHANNELING EFFECTS DURING ION-IMPLANTATION USING THE BOLTZMANN TRANSPORT-EQUATION [J].

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[8] CHANNELING IN LOW-ENERGY BORON ION-IMPLANTATION [J].

MICHEL, AE ;

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MADER, SR ;

MASTERS, BJ ;

GARDNER, JA .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :404-406

[9] PRECISE PROFILES FOR ARSENIC IMPLANTED IN SI AND SIO2 OVER A WIDE IMPLANTATION ENERGY-RANGE (10 KEV-2.56 MEV) [J].

NAKATA, J ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (09) :1363-1369

[10] SINGLE-CRYSTAL SPUTTERING INCLUDING CHANNELING PHENOMENON [J].

ONDERDELINDEN, D .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :739-+

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