ELECTRICAL AND STRUCTURAL-PROPERTIES OF ION-IMPLANTED AND POST-ANNEALED SILICIDE FILMS

被引：6

作者：

SORIMACHI, Y ^{[1
]}

ISHIWARA, H ^{[1
]}

YAMAMOTO, H ^{[1
]}

FURUKAWA, S ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,GRAD SCH SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 05期

关键词：

D O I：

10.1143/JJAP.21.752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：752 / 756

页数：5

共 7 条

[1]

FOTI G, 1977, ION IMPLANTATION SEM, P247

[2] ANNEALING BEHAVIOR OF RADIATION DAMAGES IN METAL-SILICIDES [J].

HIKOSAKA, K ;

ISHIWARA, H ;

FURUKAWA, S .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 51 (3-4) :253-256

[3] CHANNELED ION-IMPLANTATION THROUGH METALLIC-FILMS [J].

HIKOSAKA, K ;

ISHIWARA, H ;

FURUKAWA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1913-1916

[4] CHANNELING STUDIES OF RADIATION-DAMAGE IN METAL-SILICIDES [J].

ISHIWARA, H ;

HIKOSAKA, K ;

FURUKAWA, S .

APPLIED PHYSICS LETTERS, 1978, 32 (01) :23-24

[5] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792

[6] EPITAXIAL REGROWTH OF AR-IMPLANTED AMORPHOUS SILICON [J].

REVESZ, P ;

WITTMER, M ;

ROTH, J ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5199-5206

[7] ION-BEAM-INDUCED FORMATION OF THE PDSI SILICIDE [J].

TSAUR, BY ;

LAU, SS ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :225-227

← 1 →