NEW VIDEO-ENHANCED CONTRAST INFRARED TOPOGRAPH APPARATUS FOR EVALUATION OF GAAS CRYSTALS

被引：14

作者：

KATSUMATA, T

FUKUDA, T

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1986年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.1138969

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：202 / 205

页数：4

共 14 条

[1] VIDEO-ENHANCED CONTRAST POLARIZATION (AVEC-POL) MICROSCOPY - A NEW METHOD APPLIED TO THE DETECTION OF BIREFRINGENCE IN THE MOTILE RETICULOPODIAL NETWORK OF ALLOGROMIA LATICOLLARIS [J].

ALLEN, RD ;

TRAVIS, JL ;

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[2] DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS [J].

BROZEL, MR ;

GRANT, I ;

WARE, RM ;

STIRLAND, DJ .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :610-612

[3] DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

CHEN, RT ;

HOLMES, DE .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) :111-124

[4] LOW DISLOCATION DENSITY, LARGE DIAMETER, LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS [J].

ELLIOT, AG ;

WEI, CL ;

FARRARO, R ;

WOOLHOUSE, G ;

SCOTT, M ;

HISKES, R .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :169-178

[5]

ELLIOTT CR, 1981, I PHYS C SER, V60, P365

[6]

HOLMES DE, 1982, SEMIINSULATING 3 5 M, P19

[7] QUANTITATIVE PHOTO-ELASTIC MEASUREMENT OF RESIDUAL-STRESS IN LEC GROWN GAP CRYSTALS [J].

KOTAKE, H ;

HIRAHARA, K ;

WATANABE, M .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) :743-751

[8] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[9] RESISTIVITY, HALL-MOBILITY AND LEAKAGE CURRENT VARIATIONS IN UNDOPED SEMI-INSULATING GAAS CRYSTAL GROWN BY LEC METHOD [J].

MATSUMURA, T ;

EMORI, H ;

TERASHIMA, K ;

FUKUDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03) :L154-L156

[10] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].

MIYAZAWA, S ;

ISHII, Y ;

ISHIDA, S ;

NANISHI, Y .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :853-855

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