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HEAT-TREATMENT OF BULK GALLIUM-ARSENIDE USING A PHOSPHOSILICATE GLASS CAP
被引:5
作者
:
MATHUR, G
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT SYST ENGN,TROY,NY 12181
MATHUR, G
[
1
]
WHEATON, ML
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT SYST ENGN,TROY,NY 12181
WHEATON, ML
[
1
]
BORREGO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT SYST ENGN,TROY,NY 12181
BORREGO, JM
[
1
]
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT SYST ENGN,TROY,NY 12181
GHANDHI, SK
[
1
]
机构
:
[1]
RENSSELAER POLYTECH INST,DEPT SYST ENGN,TROY,NY 12181
来源
:
JOURNAL OF APPLIED PHYSICS
|
1985年
/ 57卷
/ 10期
关键词
:
D O I
:
10.1063/1.335332
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:4711 / 4714
页数:4
相关论文
共 11 条
[1]
BALIGA BJ, 1973, IEDM, P256
[2]
DIFFUSED JUNCTION P+-N SOLAR-CELLS IN BULK GAAS .1. FABRICATION AND CELL PERFORMANCE
[J].
BHAT, I
论文数:
0
引用数:
0
h-index:
0
BHAT, I
;
BHAT, KN
论文数:
0
引用数:
0
h-index:
0
BHAT, KN
;
MATHUR, G
论文数:
0
引用数:
0
h-index:
0
MATHUR, G
;
BORREGO, JM
论文数:
0
引用数:
0
h-index:
0
BORREGO, JM
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1984,
27
(02)
:121
-125
[3]
PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
[J].
CHIANG, SY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
CHIANG, SY
;
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
PEARSON, GL
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(07)
:2986
-2991
[4]
GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS
[J].
FAIRMAN, RD
论文数:
0
引用数:
0
h-index:
0
FAIRMAN, RD
;
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
;
OLIVER, JR
论文数:
0
引用数:
0
h-index:
0
OLIVER, JR
;
CHEN, DR
论文数:
0
引用数:
0
h-index:
0
CHEN, DR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(02)
:135
-140
[5]
DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
[J].
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
;
RACETTE, JH
论文数:
0
引用数:
0
h-index:
0
RACETTE, JH
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
:379
-&
[6]
DIFFUSION LENGTH MEASUREMENTS IN SCHOTTKY-BARRIER GAAS SOLAR-CELLS
[J].
LENDER, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
LENDER, RJ
;
TIWARI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
TIWARI, S
;
BORREGO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
BORREGO, JM
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1979,
22
(02)
:213
-214
[7]
PHOTOLUMINESCENCE OF DONOR DOPED GAAS DIFFUSED WITH COPPER
[J].
NAKASHIMA, H
论文数:
0
引用数:
0
h-index:
0
NAKASHIMA, H
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1971,
10
(12)
:1737
-+
[8]
EFFECT OF SURFACE PREPARATION AND HEAT-TREATMENT ON HOLE DIFFUSION LENGTHS IN VPE GAAS AND GAAS0.6P0.4
[J].
PARTIN, DL
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
PARTIN, DL
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
MILNES, AG
;
VASSAMILLET, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
VASSAMILLET, LF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(09)
:1581
-1583
[9]
HOLE DIFFUSION LENGTHS IN VPE GAAS AND GAAS0.6P0.4 TREATED WITH TRANSITION-METALS
[J].
PARTIN, DL
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
PARTIN, DL
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
MILNES, AG
;
VASSAMILLET, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
VASSAMILLET, LF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(09)
:1584
-1588
[10]
REEP DH, 1982, THESIS RENSSELAER PO
←
1
2
→
共 11 条
[1]
BALIGA BJ, 1973, IEDM, P256
[2]
DIFFUSED JUNCTION P+-N SOLAR-CELLS IN BULK GAAS .1. FABRICATION AND CELL PERFORMANCE
[J].
BHAT, I
论文数:
0
引用数:
0
h-index:
0
BHAT, I
;
BHAT, KN
论文数:
0
引用数:
0
h-index:
0
BHAT, KN
;
MATHUR, G
论文数:
0
引用数:
0
h-index:
0
MATHUR, G
;
BORREGO, JM
论文数:
0
引用数:
0
h-index:
0
BORREGO, JM
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1984,
27
(02)
:121
-125
[3]
PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
[J].
CHIANG, SY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
CHIANG, SY
;
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
PEARSON, GL
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(07)
:2986
-2991
[4]
GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS
[J].
FAIRMAN, RD
论文数:
0
引用数:
0
h-index:
0
FAIRMAN, RD
;
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
;
OLIVER, JR
论文数:
0
引用数:
0
h-index:
0
OLIVER, JR
;
CHEN, DR
论文数:
0
引用数:
0
h-index:
0
CHEN, DR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(02)
:135
-140
[5]
DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
[J].
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
;
RACETTE, JH
论文数:
0
引用数:
0
h-index:
0
RACETTE, JH
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
:379
-&
[6]
DIFFUSION LENGTH MEASUREMENTS IN SCHOTTKY-BARRIER GAAS SOLAR-CELLS
[J].
LENDER, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
LENDER, RJ
;
TIWARI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
TIWARI, S
;
BORREGO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
BORREGO, JM
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1979,
22
(02)
:213
-214
[7]
PHOTOLUMINESCENCE OF DONOR DOPED GAAS DIFFUSED WITH COPPER
[J].
NAKASHIMA, H
论文数:
0
引用数:
0
h-index:
0
NAKASHIMA, H
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1971,
10
(12)
:1737
-+
[8]
EFFECT OF SURFACE PREPARATION AND HEAT-TREATMENT ON HOLE DIFFUSION LENGTHS IN VPE GAAS AND GAAS0.6P0.4
[J].
PARTIN, DL
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
PARTIN, DL
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
MILNES, AG
;
VASSAMILLET, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
VASSAMILLET, LF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(09)
:1581
-1583
[9]
HOLE DIFFUSION LENGTHS IN VPE GAAS AND GAAS0.6P0.4 TREATED WITH TRANSITION-METALS
[J].
PARTIN, DL
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
PARTIN, DL
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
MILNES, AG
;
VASSAMILLET, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
VASSAMILLET, LF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(09)
:1584
-1588
[10]
REEP DH, 1982, THESIS RENSSELAER PO
←
1
2
→