ION-IMPLANTED IN(X)GA(1-X) AS MESFETS ON GAAS SUBSTRATE FOR LOW-COST MILLIMETER-WAVE IC APPLICATION

被引：4

作者：

FENG, M ^{[1
]}

LAU, CL ^{[1
]}

机构：

[1] UNIV ILLINOIS,CTR CPDS SEMICOND MICROELECTR,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.123467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion-implanted In(x)Ga(1-x)As MESFET's on GaAs substrate are very attractive devices for ultra-high-frequency and ultra-high-speed integrated circuit applications due to the simplicity of material structure and manufacturability of ion implantation technology. This paper presents and reviews the advances of ion-implanted In(x)Ga(1-x)As/GaAs MESFET technology focus on material structures, device fabrications, manufacturability, current gain cutoff frequency, and maximum power oscillation frequency performance, as well as low noise, power, and oscillator performance in millimeter-wave frequency range.

引用

页码：484 / 493

页数：10

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