X-RAY STANDING WAVE ANALYSIS OF BISMUTH IMPLANTED IN SI(110)

[11] LANNOO M, SPRINGER SERIES SOLI, V23, P19

[12] X-RAY STANDING WAVE ANALYSIS WITH SYNCHROTRON RADIATION APPLIED FOR SURFACE AND BULK SYSTEMS [J]. PHYSICS LETTERS A, 1984, 104 (01) : 47 - 50

[13] ACCURATE RBS DETERMINATION OF THE RANGE PROFILE OF IMPLANTED BISMUTH IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 196 (2-3): : 493 - 497

[14] LATTICE LOCATION BY CHANNELING ANGULAR-DISTRIBUTIONS - BI IMPLANTED IN SI [J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1382 - &

[15] METASTABLE SOLID-SOLUTIONS OF ANTIMONY IN (100)SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 731 - 736

[16] CRITICAL ANGLES OF SB AND BI IMPLANTED SI [J]. PHYSICS LETTERS A, 1971, A 36 (02) : 81 - &

[17] SIGURD D, 1973, RADIAT EFF, V17, P209

[18] TRUMBORE F, 1960, BELL SYST TECH J, V39, P575

[19] VONLAUE M, 1960, RONTGENSTRAHLINTERFE

[20] ELIMINATION OF THE BEAM EFFECT ON CHANNELING DIPS OF BISMUTH IMPLANTED IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 191 - 194

[11] LANNOO M, SPRINGER SERIES SOLI, V23, P19

[12] X-RAY STANDING WAVE ANALYSIS WITH SYNCHROTRON RADIATION APPLIED FOR SURFACE AND BULK SYSTEMS [J]. PHYSICS LETTERS A, 1984, 104 (01) : 47 - 50

[13] ACCURATE RBS DETERMINATION OF THE RANGE PROFILE OF IMPLANTED BISMUTH IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 196 (2-3): : 493 - 497

[14] LATTICE LOCATION BY CHANNELING ANGULAR-DISTRIBUTIONS - BI IMPLANTED IN SI [J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1382 - &

[15] METASTABLE SOLID-SOLUTIONS OF ANTIMONY IN (100)SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 731 - 736

[16] CRITICAL ANGLES OF SB AND BI IMPLANTED SI [J]. PHYSICS LETTERS A, 1971, A 36 (02) : 81 - &

[17] SIGURD D, 1973, RADIAT EFF, V17, P209

[18] TRUMBORE F, 1960, BELL SYST TECH J, V39, P575

[19] VONLAUE M, 1960, RONTGENSTRAHLINTERFE

[20] ELIMINATION OF THE BEAM EFFECT ON CHANNELING DIPS OF BISMUTH IMPLANTED IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 191 - 194