ADSORPTION OF SN ON CLEAVED SI(111) SURFACES

被引：12

作者：

TALEBIBRAHIMI, A

SEBENNE, CA

PROIX, F

MAIGNE, P

机构：

来源：

SURFACE SCIENCE | 1985年 / 163卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(85)91073-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：478 / 488

页数：11

共 10 条

[1] ROOM-TEMPERATURE ADSORPTION AND GROWTH OF GA AND IN ON CLEAVED SI(111) [J].

BOLMONT, D ;

CHEN, P ;

SEBENNE, CA ;

PROIX, F .

SURFACE SCIENCE, 1984, 137 (01) :280-292

[2] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J].

BOLMONT, D ;

CHEN, P ;

SEBENNE, CA ;

PROIX, F .

PHYSICAL REVIEW B, 1981, 24 (08) :4552-4559

[3] EFFECT OF SURFACE RECONSTRUCTION ON THE ADSORPTION OF GE ON CLEAN SI(III) [J].

CHEN, P ;

BOLMONT, D ;

SEBENNE, CA .

SOLID STATE COMMUNICATIONS, 1983, 46 (09) :689-691

[4] ADSORPTION OF AL ON CLEAVED SI(111) AT ROOM-TEMPERATURE [J].

CHEN, P ;

BOLMONT, D ;

SEBENNE, CA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (27) :4897-4905

[5] STRUCTURE AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON GE ADSORPTION [J].

CHEN, P ;

BOLMONT, D ;

SEBENNE, C .

SOLID STATE COMMUNICATIONS, 1982, 44 (08) :1191-1193

[6] STUDIES OF MONOLAYERS OF LEAD AND TIN ON SI(111) SURFACES [J].

ESTRUP, PJ ;

MORRISON, J .

SURFACE SCIENCE, 1964, 2 :465-472

[7] STRUCTURAL STUDY OF SN-INDUCED SUPERSTRUCTURES ON GE(111) SURFACES BY RHEED [J].

ICHIKAWA, T ;

INO, S .

SURFACE SCIENCE, 1981, 105 (2-3) :395-428

[8] STRUCTURAL STUDY OF ULTRATHIN SN LAYERS DEPOSITED ONTO GE(111) AND SI(111) SURFACES BY RHEED [J].

ICHIKAWA, T .

SURFACE SCIENCE, 1984, 140 (01) :37-63

[9] MANY-BODY EFFECTS IN THE (111)-SILICON DANGLING-BOND SURFACE-STATES [J].

LOUIS, E ;

FLORES, F ;

GUINEA, F ;

TEJEDOR, C .

SOLID STATE COMMUNICATIONS, 1982, 44 (12) :1633-1636

[10] HIGH-RESOLUTION PHOTOEMISSION YIELD AND SURFACE-STATES IN SEMICONDUCTORS [J].

SEBENNE, CA .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 39 (02) :768-780

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