THE EFFECTS OF GERMANIUM CONCENTRATION ON THE COMPOUND FORMATION AND MORPHOLOGY OF GOLD-BASED CONTACTS TO GALLIUM-ARSENIDE

被引：14

作者：

KIM, T

CHUNG, DDL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.583565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：762 / 768

页数：7

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共 20 条

[1] [Anonymous], 1958, HDB LATTICE SPACINGS
[2] PHASE-TRANSITIONS IN GOLD CONTACTS TO GAAS
BEAM, E
CHUNG, DDL
[J]. THIN SOLID FILMS, 1985, 128 (3-4) : 321 - 332
[3] OHMIC CONTACTS TO GAAS
BRASLAU, N
[J]. THIN SOLID FILMS, 1983, 104 (3-4) : 391 - 397
[4] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS
CHRISTOU, A
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 141 - &
[5] METALLURGICAL REACTIONS IN AU/(IN-GE) OHMIC CONTACTS TO GAAS
GROVENOR, CRM
[J]. THIN SOLID FILMS, 1983, 104 (3-4) : 409 - 418
[6] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS
GYULAI, J
MAYER, JW
RODRIGUEZ, V
YU, AYC
GOPEN, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3578 - +
[7] THE ROLE OF GERMANIUM IN EVAPORATED AU-GE OHMIC CONTACTS TO GAAS
ILIADIS, A
SINGER, KE
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (01) : 7 - &
[8] KIM T, UNPUB THIN SOLID FIL
[9] KIM T, MATER RES SOC S P
[10] DISSOCIATION OF GAAS AND GA0.7AL0.3AS DURING ALLOYING OF GOLD CONTACT FILMS
KINSBRON, E
GALLAGHER, PK
ENGLISH, AT
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (05) : 517 - &