EXPLOSIVE CRYSTALLIZATION PROCESSES IN SILICON

被引：17

作者：

GOTZ, G

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 40卷 / 01期

关键词：

D O I：

10.1007/BF00616588

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：29 / 36

页数：8

共 38 条

[1] SHOCK CRYSTALLIZATION IN AMORPHOUS FILMS OF DIELECTRICS [J].

ALEKSANDROV, LN ;

EDELMAN, FL .

SURFACE SCIENCE, 1979, 86 (JUL) :222-229

[2] EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF THIN SILICON FILMS DURING PULSE HEATING [J].

ANDRA, G ;

GEILER, HD ;

GOTZ, G ;

HEINIG, KH ;

WOITTENNEK, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (02) :511-515

[3]

ANDRA G, 1985, P INT C EPM 84 DRESD, P492

[4] EXPLOSIVE CRYSTALLIZATION OF A-SI FILMS IN BOTH THE SOLID AND LIQUID-PHASES [J].

AUVERT, G ;

BENSAHEL, D ;

PERIO, A ;

NGUYEN, VT ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :724-726

[5]

Auvert G., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P535

[6] INFLUENCE OF CW LASER SCAN SPEED IN SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILM ON SI3N4-GLASS SUBSTRATE [J].

AUVERT, G ;

BENSAHEL, D ;

GEORGES, A ;

NGUYEN, VT ;

HENOC, P ;

MORIN, F ;

COISSARD, P .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :613-615

[7] THE EFFECT OF IMPLANTATION ON EXPLOSIVELY CRYSTALLIZED A-SI [J].

BENSAHEL, D ;

AUVERT, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :392-394

[8] IMPURITY SEGREGATION DURING EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON [J].

BENSAHEL, D ;

AUVERT, G ;

PERIO, A ;

PFISTER, JC ;

IZRAEL, A ;

HENOC, P .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3485-3488

[9] EXPLOSIVE CRYSTALLIZATION IN SINGLE-CRYSTAL SILICON AMORPHIZED BY IMPLANTATION [J].

BENSAHEL, D ;

AUVERT, G ;

DUPUY, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :395-397

[10]

BENSAHEL D, 1983, MATERIALS RES SOC P, V13, P165

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