HIGH-PERFORMANCE OF ALGAINP/GAINP VISIBLE LASERS BY STRAIN INDUCED EFFECTS

被引：4

作者：

HASHIMOTO, J

KATSUYAMA, T

SHINKAI, J

YOSHIDA, I

HAYASHI, H

机构：

[1] Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd., Taya-cho, Sakae-ku

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 22期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19911256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An AlGaInP/GaInP visible strained single quantum well (SSQW) laser has been investigated. In comparison with a conventional lattice-matched single quantum well (SQW) laser, it was found that a 25% increase in the differential gain coefficient-beta and a 60% decrease in the transparency current density J0 have been obtained by incorporating a 0.65% compressive SSQW active layer structure.

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页码：2028 / 2030

页数：3

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