OXIDATION OF SILICON - STRESS-RELAXATION IN SILICA

被引:13
作者
DOREMUS, RH
机构
关键词
D O I
10.1149/1.2100806
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2001 / 2003
页数:3
相关论文
共 18 条
[1]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[2]   OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS [J].
DOREMUS, RH .
THIN SOLID FILMS, 1984, 122 (03) :191-196
[3]   OXIDATION OF SILICON BY WATER AND OXYGEN AND DIFFUSION IN FUSED SILICA [J].
DOREMUS, RH .
JOURNAL OF PHYSICAL CHEMISTRY, 1976, 80 (16) :1773-1775
[4]  
DOREMUS RH, UNPUB
[5]   DRY OXIDATION OF SILICON - A NEW MODEL OF GROWTH INCLUDING RELAXATION OF STRESS BY VISCOUS-FLOW [J].
FARGEIX, A ;
GHIBAUDO, G .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :7153-7158
[6]   ROLE OF STRESS ON THE PARABOLIC KINETIC CONSTANT FOR DRY SILICON OXIDATION [J].
FARGEIX, A ;
GHIBAUDO, G .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :589-591
[7]  
ISARD JO, 1955, J SOC GLASS TECHNOL, V187, P83
[8]  
ISARD JO, 1955, J SOC GLASS TECHNOL, V187, P61
[9]  
Kennedy J. C., 1964, PHYS CHEM GLASSES-B, V5, P130
[10]   A MEASUREMENT OF INTRINSIC SIO2 FILM STRESS RESULTING FROM LOW-TEMPERATURE THERMAL-OXIDATION OF SI [J].
KOBEDA, E ;
IRENE, EA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03) :720-722