ARSENIC ION-IMPLANTATION IN HG1-XCDXTE

被引：17

作者：

BAARS, J

SEELEWIND, H

FRITZSCHE, C

KAISER, U

ZIEGLER, J

机构：

[1] UNIV MUNSTER,INST PHYS,D-4400 MUNSTER,FED REP GER

[2] TELEFUNKEN ELECTR,D-7100 HEILBRONN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90804-T

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：762 / 767

页数：6

共 15 条

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[9] FORMATION OF P-PHOTODIODES ON N-PHOTODIODES IN HG1-XCDXTE BY ION-IMPLANTATION AND CW CO2-LASER ANNEALING [J].

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[10] PROPERTIES OF ION-IMPLANTED JUNCTIONS IN MERCURY CADMIUM TELLURIDE [J].

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