ELECTRON VELOCITY IN SHORT SAMPLES OF GA0.47IN0.53AS AT 300-K

被引:19
作者
NAG, BR [1 ]
AHMED, SR [1 ]
ROY, MD [1 ]
机构
[1] JADAVPUR UNIV, DEPT PHYS, CALCUTTA 700032, W BENGAL, INDIA
关键词
D O I
10.1109/T-ED.1986.22569
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:788 / 791
页数:4
相关论文
共 17 条
[1]   HOT-ELECTRON TRANSPORT IN IN0.53GA0.47AS [J].
AHMED, SR ;
NAG, BR ;
ROY, MD .
SOLID-STATE ELECTRONICS, 1985, 28 (12) :1193-1197
[2]   ESTIMATION OF ALLOY SCATTERING POTENTIAL IN TERNARIES FROM THE STUDY OF TWO-DIMENSIONAL ELECTRON-TRANSPORT [J].
BASU, PK ;
NAG, BR .
APPLIED PHYSICS LETTERS, 1983, 43 (07) :689-691
[3]   HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS [J].
BRENNAN, K ;
HESS, K .
SOLID-STATE ELECTRONICS, 1984, 27 (04) :347-357
[4]   MEASUREMENT OF THE GAMMA-L SEPARATION IN GA-0.47IN-0.53 AS BY ULTRAVIOLET PHOTOEMISSION [J].
CHENG, KY ;
CHO, AY ;
CHRISTMAN, SB ;
PEARSALL, TP ;
ROWE, JE .
APPLIED PHYSICS LETTERS, 1982, 40 (05) :423-425
[5]   TRANSFERRED-ELECTRON DOMAINS IN IN0.53GA0.47AS IN DEPENDENCE ON THE THE NL-PRODUCT [J].
KOWALSKY, W ;
SCHLACHETZKI, A ;
WEHMANN, HH .
SOLID-STATE ELECTRONICS, 1984, 27 (02) :187-189
[6]   VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J].
LITTLEJOHN, MA ;
HAUSER, JR ;
GLISSON, TH .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :242-244
[7]   EFFECTS OF COMPOSITIONAL CLUSTERING ON ELECTRON-TRANSPORT IN IN0.53GA0.47AS [J].
MARSH, JH .
APPLIED PHYSICS LETTERS, 1982, 41 (08) :732-734
[8]   ELECTRON-TRANSPORT IN SUB-MICRON GAAS-CHANNELS AT 300-K [J].
NAG, BR ;
ROY, MD .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (02) :65-70
[9]   SUB-MICRON ELECTRON-TRANSPORT IN SILICON AT 300 AND 77 K [J].
NAG, BR ;
AHMED, SR ;
ROY, MD .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (02) :773-779
[10]   SUB-MICRON ELECTRON-TRANSPORT IN GAAS AT 77-K [J].
NAG, BR ;
ROY, MD .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1984, 57 (04) :527-533