QUANTUM CONFINEMENT IN NANOMETER-SIZED SILICON CRYSTALLITES

被引:56
作者
ZHAO, XW [1 ]
SCHOENFELD, O [1 ]
KOMURO, S [1 ]
AOYAGI, Y [1 ]
SUGANO, T [1 ]
机构
[1] TOYO UNIV,FAC ENGN,KAWAGOE,SAITAMA 350,JAPAN
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 24期
关键词
D O I
10.1103/PhysRevB.50.18654
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Picosecond decay and temperature-dependence measurements of violet and blue-light emissions from nanocrystalline-silicon thin films were carried out. The luminescence band exhibits separated peaks at a wavelength region from 350 to 500 nm and shows no intensity degradation. The emission energies of the peaks shift towards the high-energy side at low temperatures by a temperature coefficient similar to single-crystalline silicon. The photoluminescence decays of these emissions can be completely fitted by a double-exponential equation. The two components of the lifetime 1 and 2 determined from the decay curves are 170 and 600 ps, respectively. All the optical events finish within 5 ns. The short lifetimes are suggested to be caused by an enhancement effect on the oscillator strength of the confined levels in zero-dimensionally confined silicon nanometer-sized crystallites. © 1994 The American Physical Society.
引用
收藏
页码:18654 / 18657
页数:4
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