STUDY OF THE EFFECT OF LOW-ENERGY ELECTRON-IRRADIATION ON THE DENSITY AND RELAXATION-TIME OF METAL-INSULATOR GAAS INTERFACE STATES

被引：4

作者：

TAY, M

GAZECKI, J

REEVES, G

机构：

[1] Microelectronic and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, 3000

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 65卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95104-Y

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effect of 25 keV (Q = 3 x 10(17) cm-2) electron irradiation on the interface parameters of metal-insulator (thin native oxide)-GaAs structures has been studied. A series of Au/GaAs, Al/GaAs, and (Au/Ti/GaAs) Schottky diodes were fabricated on chemically cleaned (100) nGaAs wafers. The Schottky capacitance spectroscopy method and standard I-V and C-V measurements has been used to determine the density, energy distribution and relaxation time of the interface states, before and after electron irradiation. The results are discussed in light of the existing models of atomic interactions on the metal-GaAs interface in the presence of thin insulating layer (native oxide) on the semiconductor surface.

引用

页码：554 / 559

页数：6

共 22 条

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].