THE EFFECT OF ATOMIC-SCALE ETCH PIT FORMATION ON DEPTH RESOLUTION IN SPUTTER PROFILING

被引：7

作者：

CARTER, G ^{[1
]}

NOBES, MJ ^{[1
]}

KATARDJIEV, IV ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI,INST ELECTR,BU-1113 SOFIA,BULGARIA

来源：

SURFACE AND INTERFACE ANALYSIS | 1990年 / 15卷 / 07期

关键词：

D O I：

10.1002/sia.740150709

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A very simplified model of atomic‐scale etch pitting during sputtering erosion for composition depth profiling is used to modify the Benninghoven–Hofmann approach to layer‐by‐layer sputtering. It is shown that analytically tractable defining equations result, with solutions that indicate that etch pitting slightly worsens depth resolution as the probability of producing deep etch pits increases. Copyright © 1990 John Wiley & Sons Ltd.

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页码：447 / 450

页数：4

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