GROWTH MODES IN ATOMIC HYDROGEN-ASSISTED MOLECULAR-BEAM EPITAXY OF GAAS

被引：51

作者：

OKADA, Y

FUJITA, T

KAWABE, M

机构：

[1] Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 05期

关键词：

D O I：

10.1063/1.115200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It has been shown that irradiation with atomic hydrogen during the growth of GaAs in molecular beam epitaxy (MBE) promotes an ideal layer-by-layer two-dimensional nucleation and step-flow growth mode on GaAs(001) substrates, thereby resulting in atomically flat surfaces. Fundamentally important observations related to elementary processes have been presented based on the reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) measurements. A growth model for the atomic hydrogen-assisted GaAs MBE has been postulated. (C) 1995 American Institute of Physics.

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页码：676 / 678

页数：3

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