FREQUENCY-DEPENDENCE OF THE UNILATERAL GAIN IN BIPOLAR-TRANSISTORS

被引：11

作者：

TIWARI, S

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 12期

关键词：

D O I：

10.1109/55.43144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：574 / 576

页数：3

共 9 条

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[3] HIGH-FREQUENCY CHARACTERISTICS OF INVERTED-MODE HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

DAGLI, N ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) :604-614

[5] TRANSIT-TIME REDUCTION IN ALGAAS/GAAS HBTS UTILIZING VELOCITY OVERSHOOT IN THE P-TYPE COLLECTOR REGION [J].

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KATOH, R ;

ASAKA, M ;

IIZUKA, N ;

TSUDA, K ;

OBARA, M .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) :585-587

[6] UNILATERAL GAIN OF HETEROJUNCTION BIPOLAR-TRANSISTORS AT MICROWAVE-FREQUENCIES [J].

PRASAD, S ;

LEE, W ;

FONSTAD, CG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2288-2294

[7]

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MOLL, JL .

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[9] HETEROSTRUCTURE DEVICES USING SELF-ALIGNED P-TYPE DIFFUSED OHMIC CONTACTS [J].

TIWARI, S ;

GINZBERG, A ;

AKHTAR, S ;

WRIGHT, SL ;

MARKS, RF ;

KWARK, YH ;

KIEHL, R .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :422-424

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