HYDROGEN AS THE CAUSE OF PIT FORMATION DURING LASER RECRYSTALLIZATION OF SILICON-ON-INSULATOR FILMS

被引：6

作者：

WILLEMS, GJ

MAES, HE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.343941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4444 / 4455

页数：12

共 21 条

[1] CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES [J].

DEAL, BE ;

MACKENNA, EL ;

CASTRO, PL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :997-&

[2]

Defay R, 1966, SURFACE TENSION ADSO

[3] INFRARED-ABSORPTION STUDY OF N-H BONDS IN PLASMA-DEPOSITED SILICON OXYNITRIDE FILMS [J].

DENISSE, CMM ;

JANSSEN, JFM ;

HABRAKEN, FHPM ;

VANDERWEG, WF .

APPLIED PHYSICS LETTERS, 1988, 52 (16) :1308-1310

[4] PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J].

DENISSE, CMM ;

TROOST, KZ ;

ELFERINK, JBO ;

HABRAKEN, FHPM ;

VANDEWEG, WF ;

HENDRIKS, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2536-2542

[5] ANNEALING OF PLASMA SILICON OXYNITRIDE FILMS [J].

DENISSE, CMM ;

TROOST, KZ ;

HABRAKEN, FHPM ;

VANDERWEG, WF ;

HENDRIKS, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2543-2547

[6] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J].

GRISCOM, DL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2524-2533

[7] HYDROGEN IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON (OXY)NITRIDE FILMS [J].

HABRAKEN, FHPM ;

TIJHAAR, RHG ;

VANDERWEG, WF ;

KUIPER, AET ;

WILLEMSEN, MFC .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :447-453

[8] SURFACE STABILIZATION OF POLYCRYSTALLINE-SILICON FILMS DURING LASER RECRYSTALLIZATION [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) :1824-1826

[9] HYDROGEN INCORPORATION IN SILICON (OXY)NITRIDE THIN-FILMS [J].

KUIPER, AET ;

WILLEMSEN, MFC ;

VANIJZENDOORN, LJ .

APPLIED PHYSICS LETTERS, 1988, 53 (22) :2149-2151

[10]

LASKY JB, 1982, J APPL PHYS, V53, P9038, DOI 10.1063/1.330412

← 1 2 3 →