INFRARED-ABSORPTION STUDY OF N-H BONDS IN PLASMA-DEPOSITED SILICON OXYNITRIDE FILMS

被引：11

作者：

DENISSE, CMM

JANSSEN, JFM

HABRAKEN, FHPM

VANDERWEG, WF

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 16期

关键词：

D O I：

10.1063/1.99682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1308 / 1310

页数：3

共 9 条

[1] FLUORINATED CHEMISTRY FOR HIGH-QUALITY, LOW HYDROGEN PLASMA-DEPOSITED SILICON-NITRIDE FILMS [J].

CHANG, CP ;

FLAMM, DL ;

IBBOTSON, DE ;

MUCHA, JA .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1406-1415

[2] PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J].

DENISSE, CMM ;

TROOST, KZ ;

ELFERINK, JBO ;

HABRAKEN, FHPM ;

VANDEWEG, WF ;

HENDRIKS, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2536-2542

[3] ANNEALING OF PLASMA SILICON OXYNITRIDE FILMS [J].

DENISSE, CMM ;

TROOST, KZ ;

HABRAKEN, FHPM ;

VANDERWEG, WF ;

HENDRIKS, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2543-2547

[4] HYDROGEN IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON (OXY)NITRIDE FILMS [J].

HABRAKEN, FHPM ;

TIJHAAR, RHG ;

VANDERWEG, WF ;

KUIPER, AET ;

WILLEMSEN, MFC .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :447-453

[5] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

LANFORD, WA ;

RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477

[6] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

LUCOVSKY, G ;

RICHARD, PD ;

TSU, DV ;

LIN, SY ;

MARKUNAS, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :681-688

[7] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS [J].

LUCOVSKY, G .

SOLID STATE COMMUNICATIONS, 1979, 29 (08) :571-576

[8] INFRARED-SPECTRUM AND STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON [J].

SHANKS, H ;

FANG, CJ ;

LEY, L ;

CARDONA, M ;

DEMOND, FJ ;

KALBITZER, S .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01) :43-56

[9] LOCAL ATOMIC-STRUCTURE IN THIN-FILMS OF SILICON-NITRIDE AND SILICON DIIMIDE PRODUCED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION [J].

TSU, DV ;

LUCOVSKY, G ;

MANTINI, MJ .

PHYSICAL REVIEW B, 1986, 33 (10) :7069-7076

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