QUANTUM YIELD OF ELECTRON-IMPACT IONIZATION IN SILICON

被引:137
作者
CHANG, C
HU, CM
BRODERSEN, RW
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D O I
10.1063/1.334804
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O59 [应用物理学];
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页码:302 / 309
页数:8
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共 42 条
[31]   TRANSPORT PROCESSES OF ELECTRONS IN MNOS STRUCTURES [J].
SUZUKI, E ;
HAYASHI, Y ;
YANAI, H .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7001-7006
[32]   SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATION [J].
TAKEDA, E ;
KUME, H ;
TOYABE, T ;
ASAI, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :611-618
[33]   CORRELATION BETWEEN SUBSTRATE AND GATE CURRENTS IN MOSFETS [J].
TAM, S ;
KO, PK ;
HU, CM ;
MULLER, RS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) :1740-1744
[34]   HOT-ELECTRON CURRENTS IN VERY SHORT CHANNEL MOSFETS [J].
TAM, S ;
HSU, FC ;
HU, C ;
MULLER, RS ;
KO, PK .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :249-251
[35]   SPATIALLY RESOLVED OBSERVATION OF VISIBLE-LIGHT EMISSION FROM SI MOSFETS [J].
TAM, S ;
HSU, FC ;
KO, PK ;
HU, C ;
MULLER, RS .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :386-388
[36]   THEORY OF HOT-ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE [J].
TANG, JY ;
HESS, K .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5145-5151
[37]   IMPACT IONIZATION OF ELECTRONS IN SILICON (STEADY-STATE) [J].
TANG, JY ;
HESS, K .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5139-5144
[38]  
THEIS TN, 1983, P INT C INSULATING F, P134
[39]   DETERMINATION OF SIGN OF CARRIER TRANSPORTED ACROSS SIO2-FILMS ON SI [J].
WEINBERG, ZA ;
JOHNSON, WC ;
LAMPERT, MA .
APPLIED PHYSICS LETTERS, 1974, 25 (01) :42-43
[40]   THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].
WOLFF, PA .
PHYSICAL REVIEW, 1954, 95 (06) :1415-1420