PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF SIO2-FILMS AT LOW-TEMPERATURES USING SICL4 AND O2

Silicon dioxide films have been deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD) technique using SiCl4 and O2 as reactive materials. Infra-red transmittance, Auger electron spectroscopy analysis, ellipsometry, electrical, and chemical etch measurements have been used to characterize these films. It is possible to obtain good quality oxides at a substrate temperature of 200-degrees-C using a low flow of reactant gases. High flow of reactant gases results in highly non-homogeneous porous films. The best oxide films obtained show destructive breakdown at electrical fields above 4 MV/cm and a fixed charge density of the order of 2.6 x 10(11) charges/cm2.