MATERIAL-BASED COMPARISON FOR POWER HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：5

作者：

GAO, GB

MORKOC, H

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.97401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A figure of merit based on material parameters has been used for a comparison of various Heterojunction Power Bipolar Transistors (HBT's). The general tendency is for use of narrow-bandgap materials such as Ge or InGaAs as the base and wide-bandgap materials such as AlGaAs, InP, SiC, or GaN as the collector, technology permitting.

引用

收藏

页码：2410 / 2416

页数：7

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