PASSIVATION OF INTERFACE DEFECTS IN LATTICE-MISMATCHED INGAAS/GAAS HETEROSTRUCTURES WITH HYDROGEN

被引：25

作者：

GAL, M

TAVENDALE, A

JOHNSON, MJ

USHER, BF

机构：

[1] AUSTRALIAN NUCL SCI & TECHNOL ORG,LUCAS HTS RES LABS,MENAI,NSW 2334,AUSTRALIA

[2] TELECOM AUSTRALIA,RES LABS,CLAYTON,VIC 3168,AUSTRALIA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：968 / 970

页数：3

共 9 条

[1] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES
ANDERSON, NG
LAIDIG, WD
KOLBAS, RM
LO, YC
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2361 - 2367
[2] DOPING AND TRANSPORT STUDIES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPER-LATTICES
FRITZ, IJ
DAWSON, LR
ZIPPERIAN, TE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 387 - 390
[3] OBSERVATION OF COMPRESSIVE AND TENSILE STRAINS IN INGAAS GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY
GAL, M
ORDERS, PJ
USHER, BF
JOYCE, MJ
TANN, J
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 113 - 115
[4] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY
GOURLEY, PL
FRITZ, IJ
DAWSON, LR
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 377 - 379
[5] ELIMINATION OF DARK LINE DEFECTS IN LATTICE-MISMATCHED EPILAYERS THROUGH USE OF STRAINED-LAYER SUPERLATTICES
GOURLEY, PL
BIEFELD, RM
DAWSON, LR
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 482 - 484
[6] OBSERVATION OF INTERFACE DEFECTS IN STRAINED INGAAS-GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY
JOYCE, MJ
GAL, M
TANN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1377 - 1379
[7] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS
PEARTON, SJ
CORBETT, JW
SHI, TS
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03): : 153 - 195
[8] HYDROGENATION OF GAAS ON SI - EFFECTS ON DIODE REVERSE LEAKAGE CURRENT
PEARTON, SJ
WU, CS
STAVOLA, M
REN, F
LOPATA, J
DAUTREMONTSMITH, WC
VERNON, SM
HAVEN, VE
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 496 - 498
[9] [No title captured]

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