GA VACANCY-ASSISTED DIFFUSION OF SI IN GAAS

被引：6

作者：

KAHEN, KB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 12期

关键词：

D O I：

10.1063/1.343602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6176 / 6178

页数：3

共 11 条

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[7] PROPERTIES OF GA VACANCIES IN ALGAAS MATERIALS [J].

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