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SI-DEFECT CONCENTRATIONS IN HEAVILY SI-DOPED GAAS - ANNEALING-INDUCED CHANGES-II

被引：26
作者：
CHEN, RT
SPITZER, WG
机构：
[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
[2] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 06期
关键词：
D O I：
10.1007/BF02661193
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1085 / 1129
页数：45
相关论文
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