MINORITY-CARRIER LIFETIME IN FURNACE AND E-BEAM ANNEALED CZ SILICON

被引：10

作者：

SUSI, E ^{[1
]}

LULLI, G ^{[1
]}

PASSARI, L ^{[1
]}

机构：

[1] IST FIS,GRP NAZI STRUTTURA MAT,GNSM,FERRARA,ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 05期

关键词：

D O I：

10.1149/1.2100649

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1239 / 1243

页数：5

共 21 条

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[7]

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[8]

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[9] RECOMBINATION LIFETIME IN OXYGEN-PRECIPITATED SILICON [J].

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IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) :172-174

[10] ELECTRON-BEAM ANNEALING OF SEMICONDUCTORS BY MEANS OF A SPECIFICALLY DESIGNED ELECTRON-GUN [J].

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MERLI, PG .

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