CORRELATION OF THERMAL HISTORY AND THERMAL DONOR FORMATION

被引：7

作者：

GOTH, D

HABERMEIER, HU

BREITSCHWERDT, A

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90246-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：223 / 229

页数：7

共 19 条

[1] On the kinetics of thermal donor formation in silicon [J].

Borenstein, Jeffrey T. ;

Peak, David ;

Corbett, James W. .

JOURNAL OF MATERIALS RESEARCH, 1986, 1 (04) :527-536

[2] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J].

BOURRET, A ;

THIBAULTDESSEAUX, J ;

SEIDMAN, DN .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :825-836

[3]

Bourret A., 1985, Thirteenth International Conference on Defects in Semiconductors, P129

[4]

DEKOCK AJR, 1983, AGGREGATION PHENOMEN, P58

[5] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J].

GRAFF, K ;

GRALLATH, E ;

ADES, S ;

GOLDBACH, G ;

TOLG, G .

SOLID-STATE ELECTRONICS, 1973, 16 (08) :887-893

[6] EFFECTS OF HIGH-CARBON CONCENTRATION UPON OXYGEN PRECIPITATION AND RELATED PHENOMENA IN CZSI [J].

HAHN, S ;

ARST, M ;

RITZ, KN ;

SHATAS, S ;

STEIN, HJ ;

REK, ZU ;

TILLER, WA .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :849-855

[7] OXIDE MICRO-PRECIPITATES IN AS-GROWN CZ SILICON [J].

INOUE, N ;

OSAKA, J ;

WADA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2780-2788

[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[9] THE NUCLEATION KINETICS OF PLATELIKE OXIDE PRECIPITATES IN CZ-SILICON [J].

JABLONSKI, J ;

WOJCIECHOWSKI, J ;

KUCHARSKI, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 105 (01) :113-121

[10] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

← 1 2 →