INTRINSIC STRESS AND HYDROGEN-BONDING IN GLOW-DISCHARGE AMORPHOUS-SILICON FILMS

被引：21

作者：

KAKINUMA, H

NISHIKAWA, S

WATANABE, T

NIHEI, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 09期

关键词：

D O I：

10.1063/1.336887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3110 / 3115

页数：6

共 23 条

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[5] EFFECT OF SILANE DILUTION ON INTRINSIC STRESS IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON FILMS [J].

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[6]

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KAKINUMA, H ;

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[8] BORON-DOPING EFFECTS ON THE ELECTRICAL-PROPERTIES OF HIGH-DEPOSITION RATE AMORPHOUS-SILICON [J].

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[9] REACTIONS OF ATOMIC-HYDROGEN IN THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON BY GLOW-DISCHARGE AND REACTIVE SPUTTERING [J].

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[10] HYDROGEN ELIMINATION DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI-H ALLOYS [J].

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