TI-SI MIXING AT ROOM-TEMPERATURE - A HIGH-RESOLUTION ION BACKSCATTERING STUDY

被引:65
作者
VANLOENEN, EJ
FISCHER, AEMJ
VANDERVEEN, JF
机构
关键词
D O I
10.1016/0039-6028(85)90405-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:65 / 78
页数:14
相关论文
共 25 条
[1]   SOLID-STATE NUCLEATION IN THE TI-SI ULTRATHIN FILM SYSTEM [J].
BENE, RW ;
YANG, HY .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (01) :1-10
[2]   CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J].
BUTZ, R ;
RUBLOFF, GW ;
HO, PS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :771-775
[3]  
Chu WK., 1978, BACKSCATTERING SPECT
[4]   ATOMIC DISPLACEMENTS IN THE SI(111)-(7X7) SURFACE [J].
CULBERTSON, RJ ;
FELDMAN, LC ;
SILVERMAN, PJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (25) :2043-2046
[5]   SI-METAL INTERFACE REACTION AND BULK ELECTRONIC-STRUCTURE OF SILICIDES [J].
FRANCIOSI, A ;
WEAVER, JH .
PHYSICA B & C, 1983, 117 (MAR) :846-847
[6]  
Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
[8]   ELS STUDY ON THE INITIAL-STAGE OF TI-SILICIDE FORMATION ON SI(111) AT ROOM-TEMPERATURE [J].
IWAMI, M ;
HASHIMOTO, S ;
HIRAKI, A .
SOLID STATE COMMUNICATIONS, 1984, 49 (05) :459-462
[9]  
IWAMI M, 1983, PHYSICA B, V116, P328
[10]   SOLID-STATE REACTIONS IN TITANIUM THIN-FILMS ON SILICON [J].
KATO, H ;
NAKAMURA, Y .
THIN SOLID FILMS, 1976, 34 (01) :135-138