ELECTRICAL-PROPERTIES OF P-TYPE ZNSEN THIN-FILMS

被引：36

作者：

YANG, Z

BOWERS, KA

REN, J

LANSARI, Y

COOK, JW

SCHETZINA, JF

机构：

[1] Department of Physics, North Carolina State University, Raleigh

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 22期

关键词：

D O I：

10.1063/1.108104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The van der Pauw Hall effect measurements from 77-350 K are reported for a series of p-type nitrogen-doped ZnSe thin films. Epitaxial HgSe electrodes were used as ohmic contacts in these experiments.

引用

页码：2671 / 2673

页数：3

共 21 条

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :909-911

[17] PROPERTIES OF ZNSE-ZNSE0.9TE0.1 AND ZNSE-ZN0.9CD0.1SE MULTILAYERS [J].

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JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :510-514

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XIE, W ;

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APPLIED PHYSICS LETTERS, 1992, 60 (16) :1999-2001

[20] BLUE GREEN PN JUNCTION ELECTROLUMINESCENCE FROM ZNSE-BASED MULTIPLE QUANTUM-WELL STRUCTURES [J].

XIE, W ;

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NURMIKKO, AV .

APPLIED PHYSICS LETTERS, 1992, 60 (04) :463-465

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