INFLUENCE OF HEAT-TREATMENT ON MORPHOLOGICAL AND ELECTRICAL-PROPERTIES OF GAAS EPILAYER-SUBSTRATE INTERFACE

被引：14

作者：

KAUFMANN, LMF

HEIME, K

BURCHARD, WG

机构：

[1] TECH UNIV AACHEN,INST SEMICOND ELECTR,SONDER FORSCH BEREICH 56 FESTKORPERELEKTRONIK,D-5100 AACHEN,FED REP GER

[2] TECH UNIV AACHEN,GEMEINSCHAFTSLABOR ELEKTRONENMIKROSKOPIE,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 34卷 / 02期

关键词：

D O I：

10.1016/0022-0248(76)90142-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：289 / 297

页数：9

相关论文

共 32 条

[1] BACHEM KH, 1974, JAP SOC APPL PHYS, V43, P222
[2] SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS
BAUSER, E
FRIK, M
LOECHNER, KS
SCHMIDT, L
ULRICH, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 148 - 153
[3] BAUSER E, TO BE PUBLISHED
[4] GROWTH OF UNIFORM EPITAXIAL LAYERS BY LIQUID-PHASE-EPITAXIAL METHOD
BLUM, JM
SHIH, KK
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1394 - &
[5] VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (05) : 143 - &
[6] SOME OBSERVATIONS OF SURFACE MORPHOLOGIES OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXY
CROSSLEY, I
SMALL, MB
[J]. JOURNAL OF CRYSTAL GROWTH, 1973, 19 (03) : 160 - 168
[7] COMPUTER SIMULATIONS OF LIQUID PHASE EPITAXY OF GAAS IN GA SOLUTION
CROSSLEY, I
SMALL, MB
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 11 (02) : 157 - &
[8] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
GYULAI, J
MAYER, JW
MITCHELL, IV
RODRIGUEZ, V
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 332 - +
[9] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE
HARRIS, JS
NANNICHI, Y
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4575 - &
[10] DEEP ENERGY LEVELS IN HIGH RESISTANCE REGION AT GAAS VAPOR EPITAXIAL FILM-SUBSTRATE INTERFACE
HASEGAWA, F
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (06) : 638 - &

← 1 2 3 4 →