ELECTRONIC-STRUCTURE OF THE AU-MN PAIR COMPLEX IN SILICON

被引:3
作者
ASSALI, LVC
LEITE, JR
机构
[1] Univ de Sao Paulo, Sao Paulo, Braz, Univ de Sao Paulo, Sao Paulo, Braz
关键词
CLUSTER MODEL - GOLD-INTERSTITIAL-MANGANESE PAIR;
D O I
10.1016/0038-1098(86)90222-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:577 / 580
页数:4
相关论文
共 21 条
[1]   ELECTRONIC-STRUCTURE OF GOLD SUBSTITUTIONAL IMPURITY IN SILICON [J].
ALVES, JLA ;
LEITE, JR ;
ASSALI, LVC ;
GOMES, VMS ;
DASILVA, CETG .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (29) :L771-L774
[2]   WATSON-SPHERE-TERMINATED MODEL APPLIED TO THE AUO AND PT- SUBSTITUTIONAL IMPURITIES IN SILICON [J].
ALVES, JLA ;
LEITE, JR .
PHYSICAL REVIEW B, 1984, 30 (12) :7284-7286
[3]   MICROSCOPIC MODELS OF HG+, AU0 AND PT- ISOELECTRONIC INTERSTITIAL IMPURITIES IN SILICON [J].
ALVES, JLA ;
LEITE, JR ;
GOMES, VMS ;
ASSALI, LVC .
SOLID STATE COMMUNICATIONS, 1985, 55 (04) :333-337
[4]   THEORETICAL-MODEL OF THE AU-FE COMPLEX IN SILICON [J].
ASSALI, LVC ;
LEITE, JR ;
FAZZIO, A .
PHYSICAL REVIEW B, 1985, 32 (12) :8085-8091
[5]   MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON [J].
ASSALI, LVC ;
LEITE, JR .
PHYSICAL REVIEW LETTERS, 1985, 55 (09) :980-982
[6]   THEORETICAL EVIDENCE FOR LOW-SPIN GROUND-STATES OF EARLY INTERSTITIAL AND LATE SUBSTITUTIONAL 3D TRANSITION-METAL IONS IN SILICON [J].
BEELER, F ;
ANDERSEN, OK ;
SCHEFFLER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (14) :1498-1501
[7]   ENERGY-LEVELS IN SILICON [J].
CHEN, JW ;
MILNES, AG .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 :157-228
[8]   LEVEL POSITIONS OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].
DELEO, GG ;
WATKINS, GD ;
FOWLER, WB .
PHYSICAL REVIEW B, 1982, 25 (08) :4972-4980
[9]   THEORY OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].
DELEO, GG ;
WATKINS, GD ;
FOWLER, WB .
PHYSICAL REVIEW B, 1981, 23 (04) :1851-1858
[10]   MANY-ELECTRON EFFECTS FOR INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].
DELEO, GG ;
WATKINS, GD ;
FOWLER, WB .
PHYSICAL REVIEW B, 1982, 25 (08) :4962-4971