VALENCE-BAND-EDGE SHIFT DUE TO DOPING IN P+ GAAS

被引:13
作者
SILBERMAN, JA
DELYON, TJ
WOODALL, JM
机构
[1] IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
关键词
D O I
10.1063/1.104981
中图分类号
O59 [应用物理学];
学科分类号
摘要
Accurate knowledge of the shifts in valence- and conduction-band edges due to heavy doping effects is crucial in modeling GaAs device structures that utilize heavily doped layers. X-ray photoemission spectroscopy was used to deduce the shift in the valence-band-edge induced by carbon (p type) doping to a carrier density of 1 X 10(20) cm-3 based on a determination of the bulk binding energy of the Ga and As core levels in this material. Analysis of the data indicates that the shift of the valence-band maximum into the gap and the penetration of the Fermi level into the valence bands exactly compensate at this degenerate carrier concentration, to give DELTA-E-upsilon = 0.12 +/- 0.05 eV.
引用
收藏
页码:2126 / 2128
页数:3
相关论文
共 16 条
[1]   ULTRAHIGH DOPING OF GAAS BY CARBON DURING METALORGANIC MOLECULAR-BEAM EPITAXY [J].
ABERNATHY, CR ;
PEARTON, SJ ;
CARUSO, R ;
REN, F ;
KOVALCHIK, J .
APPLIED PHYSICS LETTERS, 1989, 55 (17) :1750-1752
[2]   ACCURACY OF VARIOUS THEORIES OF BAND-GAP NARROWING IN P-DOPED SEMICONDUCTORS [J].
BARDYSZEWSKI, W ;
YEVICK, D .
PHYSICAL REVIEW B, 1987, 35 (02) :619-625
[3]   MODELS FOR HEAVY DOPING EFFECTS IN GALLIUM-ARSENIDE [J].
BENNETT, HS ;
LOWNEY, JR .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :521-527
[4]   OHMIC CONTACTS TO N-TYPE GAAS [J].
BOUDVILLE, WJ ;
MCGILL, TC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1192-1196
[5]   LOW SURFACE RECOMBINATION VELOCITY AND CONTACT RESISTANCE USING P+/P CARBON-DOPED GAAS STRUCTURES [J].
DELYON, TJ ;
KASH, JA ;
TIWARI, S ;
WOODALL, JM ;
YAN, D ;
POLLAK, FH .
APPLIED PHYSICS LETTERS, 1990, 56 (24) :2442-2444
[6]   BAND-GAP NARROWING IN NOVEL III-V SEMICONDUCTORS [J].
JAIN, SC ;
MCGREGOR, JM ;
ROULSTON, DJ .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3747-3749
[7]   THE EFFECTS OF HEAVY IMPURITY DOPING ON ALGAAS/GAAS BIPOLAR-TRANSISTORS [J].
KLAUSMEIERBROWN, ME ;
LUNDSTROM, MS ;
MELLOCH, MR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2146-2155
[8]   SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
KRAUT, EA ;
GRANT, RW ;
WALDROP, JR ;
KOWALCZYK, SP .
PHYSICAL REVIEW B, 1983, 28 (04) :1965-1977
[9]   BAND-GAP NARROWING IN THE SPACE-CHARGE REGION OF HEAVILY DOPED SILICON DIODES [J].
LOWNEY, JR .
SOLID-STATE ELECTRONICS, 1985, 28 (1-2) :187-191
[10]   ENERGY-GAP IN SI AND GE - IMPURITY DEPENDENCE [J].
MAHAN, GD .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2634-2646