STRUCTURAL AND ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS DEPOSITED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION WITH AND WITHOUT PLASMA ENHANCEMENT

被引：10

作者：

HAJJAR, JJJ

REIF, R

ADLER, D

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 05期

关键词：

D O I：

10.1007/BF02659023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：279 / 285

页数：7

共 19 条

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[5] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J].

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[6]

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[7] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT [J].

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REIF, R .

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[8]

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[9] GLOW-DISCHARGE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].

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APPLIED PHYSICS LETTERS, 1983, 42 (08) :701-703

[10] ANALYSIS OF SILICON CRYSTAL-GROWTH USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

HOTTIER, F ;

CADORET, R .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :245-258

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