DOPED HYDROGENATED AMORPHOUS-SILICON FILMS BY LASER-INDUCED CHEMICAL VAPOR-DEPOSITION

被引：16

作者：

BRANZ, HM

FAN, S

FLINT, JH

FISKE, BT

ADLER, D

HAGGERTY, JS

机构：

[1] MIT, Cambridge, MA, USA, MIT, Cambridge, MA, USA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 02期

关键词：

ELECTRIC CONDUCTIVITY - Thermodynamics - SEMICONDUCTING FILMS - Growth - SEMICONDUCTOR MATERIALS - Electric Conductivity - SILICON AND ALLOYS - Chemical Vapor Deposition;

D O I：

10.1063/1.96933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth and characterization of both n-type and p-type doped hydrogenated amorphous silicon films prepared by laser-induced chemical vapor deposition. For both doping types, the activation energy for electrical conduction has been reduced to below 0. 2 eV and controlled doping has been achieved. Phosphine lowers the growth rate, while diborane has essentially no effect on the laser-induced growth but enhances thermal growth. Diborane also decreases the hydrogen concentration of the films, resulting in reduced optical gaps.

引用

页码：171 / 173

页数：3

共 15 条

[1]

ATKINS LV, 1984, THESIS MIT CAMBRIDGE

[2] EFFECT OF BORON-DOPING ON THE HYDROGEN EVOLUTION FROM A-SI-H FILMS [J].