DEEP LEVELS IN SEMICONDUCTORS

被引：148

作者：

WATKINS, GD ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90432-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：9 / 15

页数：7

共 32 条

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[8] LEVEL POSITIONS OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

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