INTERACTIONS OF AMORPHOUS-ALLOYS WITH SI SUBSTRATES AND AL OVERLAYERS

[1] SOLID-STATE REACTIONS OF TA-W THIN-FILMS AND SI SINGLE-CRYSTALS [J]. VACUUM, 1983, 33 (04) : 227 - 230

[2] COLGAN EG, UNPUB

[3] ALUMINUM-SILICON OHMIC CONTACT ON SHALLOW N+-P JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (03) : 255 - &

[4] KINETICS OF COMPOUND FORMATION IN THIN-FILM COUPLES OF AL AND TRANSITION-METALS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 68 - 71

[5] SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5855 - 5859

[6] MCCALDIN JO, 1973, APPL PHYS LETT, V22, P64

[7] PHASE-SEPARATION IN ALLOY-SI INTERACTION [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 331 - 333

[8] OTTAVIANI G, 1981, RELIABILITY DEGRADAT, pCH2

[9] A COMPARISON BETWEEN THERMAL ANNEALING AND ION MIXING OF ALLOYED NI-W FILMS ON SI .1. [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4172 - 4177

[10] FAILURE TEMPERATURE OF AMORPHOUS CU-TA ALLOYS AS DIFFUSION-BARRIERS IN AL-SI CONTACTS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 646 - 648

[1] SOLID-STATE REACTIONS OF TA-W THIN-FILMS AND SI SINGLE-CRYSTALS [J]. VACUUM, 1983, 33 (04) : 227 - 230

[2] COLGAN EG, UNPUB

[3] ALUMINUM-SILICON OHMIC CONTACT ON SHALLOW N+-P JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (03) : 255 - &

[4] KINETICS OF COMPOUND FORMATION IN THIN-FILM COUPLES OF AL AND TRANSITION-METALS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 68 - 71

[5] SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5855 - 5859

[6] MCCALDIN JO, 1973, APPL PHYS LETT, V22, P64

[7] PHASE-SEPARATION IN ALLOY-SI INTERACTION [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 331 - 333

[8] OTTAVIANI G, 1981, RELIABILITY DEGRADAT, pCH2

[9] A COMPARISON BETWEEN THERMAL ANNEALING AND ION MIXING OF ALLOYED NI-W FILMS ON SI .1. [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4172 - 4177

[10] FAILURE TEMPERATURE OF AMORPHOUS CU-TA ALLOYS AS DIFFUSION-BARRIERS IN AL-SI CONTACTS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 646 - 648