WSIX REFRACTORY METALLIZATION FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：44

作者：

LAHAV, AG ^{[1
]}

WU, CS ^{[1
]}

BAIOCCHI, FA ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1785 / 1795

页数：11

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