A MECHANISM AND KINETICS OF SILICON GROWTH

被引：16

作者：

STASSINOS, EC ^{[1
]}

ANDERSON, TJ ^{[1
]}

LEE, HH ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT CHEM ENGN,GAINESVILLE,FL 32611

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 73卷 / 01期

关键词：

D O I：

10.1016/0022-0248(85)90325-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：21 / 30

页数：10

共 15 条

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BLOEM, J ;

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[4] NUCLEATION AND GROWTH OF SILICON BY CVD [J].

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[5] HIGH CHEMICAL VAPOR-DEPOSITION RATES OF EPITAXIAL SILICON LAYERS [J].

BLOEM, J .

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[6] KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION [J].

BYLANDER, EG .

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[7]

Chernov A. A., 1977, Soviet Physics - Crystallography, V22, P18

[8] GROWTH KINETICS AND CAPTURE OF IMPURITIES DURING GAS-PHASE CRYSTALLIZATION [J].

CHERNOV, AA .

JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :55-76

[9] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .2. THE SIH2CL2-H2-N2-HCL SYSTEM [J].

CLAASSEN, WAP ;

BLOEM, J .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (04) :807-815

[10]

CLAASSEN WAP, 1981, PHILIPS J RES, V36, P124

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