DIFFUSION OF BORON IN MO SILICIDE FILMS

被引：4

作者：

KATO, J

FUJISAWA, A

ASAHINA, M

SHIMURA, H

YAMAMOTO, Y

机构：

[1] SEIKO EPSON CORP,RES & DEV,SUWA,NAGANO,JAPAN

[2] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.337037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4186 / 4189

页数：4

共 9 条

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[5]

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3059-3062

[8] DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON [J].

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KAMINS, TI .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :795-798

[9] ONE-MICRON POLYCIDE (WSI2 ON POLY-SI) - MOSFET TECHNOLOGY [J].

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