BIAXIAL COMPRESSION IN GAAS THIN-FILMS GROWN ON SI

被引：12

作者：

JOSHKIN, V

ORLIKOVSKY, A

OKTYABRSKY, S

DOVIDENKO, K

KVIT, A

MUHAMEDZANOV, I

PASHAEV, E

机构：

[1] PN LEBEDEV PHYS INST,MOSCOW 117924,RUSSIA

[2] RUSSIAN ACAD SCI,INST CRISTALLOG,MOSCOW 117333,RUSSIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 147卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)00620-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Using X-ray diffraction, transmission electron microscopy and low temperature photoluminescence, we investigated the interfacial strain accommodation of the MBE grown thin (0.3-2 mu m) films of GaAs on (001)Si substrates. When heavily As-doped Si buffer layers were used, the GaAs-on-Si films displayed biaxial compression rather than tension and smaller unit-cell volumes as compared with that expected from elastically compressed GaAs bulk single crystal. As a result of studying of the biaxial stress influence on the PL spectra of GaAs, we proposed a new identification of PL bands in GaAs-on-Si. The effect of rapid and slow thermal annealing is also investigated.

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收藏

页码：13 / 18

页数：6

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