A SEMI-EMPIRICAL MODEL FOR THE FIELD-EFFECT MOBILITY OF HYDROGENATED POLYCRYSTALLINE-SILICON MOSFETS

被引：28

作者：

SEKI, S

KOGURE, O

TSUJIYAMA, B

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 05期

关键词：

D O I：

10.1109/16.2511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：669 / 674

页数：6

共 15 条

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